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Mitsubishi Develops new Trench-type SiC-MOSFET - News
Mitsubishi Develops new Trench-type SiC-MOSFET - News

Schematics of the three architectures of SiC power MOSFETs tested in... |  Download Scientific Diagram
Schematics of the three architectures of SiC power MOSFETs tested in... | Download Scientific Diagram

Optimizing SiC MOSFET Chip and Packaging Design to Match Specific  Application Requirements
Optimizing SiC MOSFET Chip and Packaging Design to Match Specific Application Requirements

Infineon Launches Automotive Qualified SiC Power Module for EV Traction  Inverters - Power Electronics News
Infineon Launches Automotive Qualified SiC Power Module for EV Traction Inverters - Power Electronics News

4H-SiC trench MOSFET with splitting double-stacked shielded region -  ScienceDirect
4H-SiC trench MOSFET with splitting double-stacked shielded region - ScienceDirect

Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? –  SiC-MOSFET Features | TechWeb
Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb

Third Quadrant Operation of 1.2-10 kV SiC Power MOSFETs
Third Quadrant Operation of 1.2-10 kV SiC Power MOSFETs

Designing in SiC MOSFETs | DigiKey
Designing in SiC MOSFETs | DigiKey

Figure 2 from A New SiC Trench MOSFET Structure With Protruded p-Base for  Low Oxide Field and Enhanced Switching Performance | Semantic Scholar
Figure 2 from A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance | Semantic Scholar

Materials | Free Full-Text | Influence of Different Device Structures on  the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an  Example
Materials | Free Full-Text | Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than  competition. | Navitas
Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition. | Navitas

Mitsubishi Electric develops trench-type SiC MOSFET with  electric-field-limiting structure
Mitsubishi Electric develops trench-type SiC MOSFET with electric-field-limiting structure

Investigations of short-circuit failure in double trench SiC MOSFETs  through three-dimensional electro-thermal-mechanical stress analysis -  ScienceDirect
Investigations of short-circuit failure in double trench SiC MOSFETs through three-dimensional electro-thermal-mechanical stress analysis - ScienceDirect

Figure 1 from SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce  Oxide Field and Switching Loss | Semantic Scholar
Figure 1 from SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss | Semantic Scholar

A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded  to optimize the electric field characteristics
A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

Short Circuit Tests with 4th Gen SiC MOSFET in a Power Module for xEV Main  Inverters - Technical Articles
Short Circuit Tests with 4th Gen SiC MOSFET in a Power Module for xEV Main Inverters - Technical Articles

Two typical SiC MOSFET flavors: (a) planar and (b) trench. Figure... |  Download Scientific Diagram
Two typical SiC MOSFET flavors: (a) planar and (b) trench. Figure... | Download Scientific Diagram

SiC Trench Plasma Etching for SiC Power Device Fabrication - Samco Inc.
SiC Trench Plasma Etching for SiC Power Device Fabrication - Samco Inc.

Electronics | Free Full-Text | A 1200 V SiC Trench MOSFET with a Laterally  Widened P-Shield Region to Enhance the Short-Circuit Ruggedness
Electronics | Free Full-Text | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness

Technology Details - Infineon Technologies
Technology Details - Infineon Technologies

SiC trench MOSFET with heterojunction diode for low switching loss and high  short‐circuit capability - An - 2019 - IET Power Electronics - Wiley Online  Library
SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability - An - 2019 - IET Power Electronics - Wiley Online Library

Schematic view of the planar and trench MOSFET cross-sections with the... |  Download Scientific Diagram
Schematic view of the planar and trench MOSFET cross-sections with the... | Download Scientific Diagram

Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off  electrical characteristics - ScienceDirect
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics - ScienceDirect

Cross section of WBG trench VDMOS including (a) trench-gate SiC, (b)... |  Download Scientific Diagram
Cross section of WBG trench VDMOS including (a) trench-gate SiC, (b)... | Download Scientific Diagram

Materials | Free Full-Text | 4H-SiC Double Trench MOSFET with Split  Heterojunction Gate for Improving Switching Characteristics
Materials | Free Full-Text | 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Figure 10 from SiC Trench MOSFET With Integrated Self-Assembled Three-Level  Protection Schottky Barrier Diode | Semantic Scholar
Figure 10 from SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode | Semantic Scholar

ROHM Gen 4: A Technical Review | TechInsights
ROHM Gen 4: A Technical Review | TechInsights