Microtrenching resulting from specular reflection during chlorine etching of silicon
Technical Report : GaN Trench Etching and Sidewall Angle Control for Vertical Power Device - Samco Inc.
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask - ScienceDirect
Shallow trench isolation - Wikipedia
BEOL (Back End of Line: interconnect process, the second half of wafer processing) 11. Metal-2 | USJC：United Semiconductor Japan Co., Ltd.
Plasma Etch Processes for SiC and GaN-on-Si Power Devices | SPTS
Plasma-based dry etching techniques in the silicon integrated circuit technology | Semantic Scholar
Silicon trenches etched in an ICP chamber with pure Cl 2 chemistry.... | Download Scientific Diagram
Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers | ACS Omega
Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts | ACS Applied Materials & Interfaces
Micromachines | Free Full-Text | Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching
Wet etching of deep trenches on silicon with three-dimensional (3D) controllability | Semantic Scholar
Photo-electro-chemical deep trench etching in gallium nitride
Micromachines | Free Full-Text | Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD
SiC Via Hole & Trench Dry Etching Process (ICP-RIE) - SAMCO Inc.
REVIEW ARTICLE Review of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glas
GaN Trench etching | ULVAC
High aspect ratio via etching conditions for deep trench of silicon - ScienceDirect
Trench etch masking before anisotropic Silicon etching. | Download Scientific Diagram
Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts | ACS Applied Materials & Interfaces
Plasma etching of the trench pattern with high aspect ratio mask under ion tilting - ScienceDirect
